| 25W PURE CARBIDE GaN Amplifier The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz and is housed in a surface mount plastic package. The easy-to-use general purpose amplifier is internally input matched to 50 Ohms which simplifies the customer’s design-in effort. The amplifier can deliver more than 25 W (44dBm) at greater than 50% efficiency in a broadband circuit for use in Military Radio Communications, RADAR, Avionics, Digital Cellular Infrastructure, RF Energy, and Test Instrumentation applications. Learn More >> |
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| 65W PURE CARBIDE GaN Amplifier The MAPC-A1100 is a high power GaN-on-SiC amplifier designed to operate between DC to 3.5 GHz and is housed in a ceramic package. The easy-to-use general purpose amplifier can deliver more than 65 W (48.1 dBm) in a broadband circuit for use in Military Radio Communications, RADAR, Avionics, Digital Cellular Infrastructure, RF Energy, and Test Instrumentation applications. Learn More >> |
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| 85W PURE CARBIDE GaN Amplifier The MAPC-A1101 is a high power GaN-on-SiC amplifier designed for DC to 3.5 GHz operation and is housed in a ceramic package. The device supports both CW and pulsed operation with peak output power levels of 85W (49.4 dBm). The device is ideally suited for a multitude of applications including Military Radio Communications, RADAR, Avionics, Digital Cellular Infrastructure, RF Energy, and Test Instrumentation. Learn More >> |
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| 150W PURE CARBIDE GaN Amplifier The MAPC-A1102 is a high power GaN-on-SiC amplifier designed for DC to 3.5 GHz operation and is housed in a ceramic package. The device supports both CW and pulsed operation with peak output power levels of 150W (51.75 dBm). The device is ideally suited for a multitude of applications including Military Radio Communications, RADAR, Avionics, Digital Cellular Infrastructure, RF Energy, and Test Instrumentation. Learn More >> |
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